High-quality raw materials for the synthesis of silicon carbide single crystals of modifications 4H-SIC and 6H-SIC used in electronic devices.
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
Used for etching materials of the semiconductor industry (silicon and quartz wafers)
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is based on the condensation of supersaturated vapor on a single crystal seed.
The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by method of floating zone.
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from melts.
Is actual for machines for growing crystals with mass more 60 kg
The main upgrade is to use a new type of heater.
The machine is designed for obtaining high-purity fractions of silicon dioxide SiO2 purity up to 99,9995 %.
High-purity quartz is used for the production of materials and products for the micro-electronics industry.
Parts made from metal granules using 3D printing or gas-static pressing are used for medicine (implants, medical wires, surgical instruments), for aviation (disks, shafts, shells, complex shapes).
Effective manufacture management begins at the workshop/development level. The specialized automation systems for engineering activities help to optimize workshop production.