Plant for the growth of silicon carbide single crystals 4 or 6 inch diameter
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is based on the condensation of supersaturated vapor on a single crystal seed.
| Dimensions | |
| Width, mm | 1800 |
| Depth, mm | 1540 |
| Height, mm | 2740 |
| Maximum occupied area (including service area), m2 | 9 |
|
Electrical parameters |
4” |
6” |
| Maximum power source, kVA |
80 |
|
| Rated mains voltage, V |
380 |
|
| Nominal frequency, Hz |
50(60) |
|
| Number of power line phases |
3 |
|
| Power consumption during crystal growth, kW |
36 |
52 |
| Accuracy of power stabilization in the heating circuit, % |
0,1 |
|
| Heating method |
Resistive |
|
| Physical and mechanical parameters | |
| Maximum operating temperature of the hot zone, °С | 2350 |
| The temperature accuracy of the hot zone, °С | ± 1 |
| Limit residual pressure of «cold» installation, Pa | 2∙10-3 |
| The maximum flow rate of the alloying gas (N2), l/h | 0,9 |
| Maximum inert gas flow rate (Ar), l/h | 9 (360) |
| Gas flow control error, % | 0,1 |
| The range of operating speeds of the crucible during growth, mm/h | 0,3 — 30 |
| Crucible rotation speed, rpm | 1-4 |
| Consumption of cooling water at rated temperature furnaces, m3/h | 6 |
Silicon carbide is one of the most promising materials for high-temperature, radiation-resistant, power and high-speed electronics, as it has unique physical and electronic properties. These properties include: wide forbidden zone (approximately three times more than silicon), high critical avalanche breakdown field (approximately 10 times more than silicon), high saturated electron drift velocity (2.5 times more than in silicon and gallium arsenide), high thermal stability, chemical inertness, etc.
|
The parameters of the obtained crystals and plates |
|
| Polytype |
4H, 6H |
| Polytype homogeneity, % |
100 |
| Diameter, mm |
100-150 |
| Thickness at the center point, mm |
18 — 25 |
| Conductivity type |
n |
| Dopant |
nitrogen (N2) |
| Specific resistance, Ohm m |
0.0001 – 0.01 |
| Micropore density, sm-2 |
≤ 5 |
| Dislocation density, sm-2 |
≤ 4∙103 |
Examples of obtained crystals and plates
Other equipment and control systems NPK Spectr LLC
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Polycrystalline silicon carbide powder
High-quality raw materials for the synthesis of silicon carbide single crystals of modifications 4H-SIC and 6H-SIC used in electronic devices.
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Plant for the growth of silicon carbide single crystals 4 or 6 inch diameter
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is
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Silicon dioxide (quartz)
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.