Is actual for machines for growing crystals with mass more 60 kg
The main upgrade is to use a new type of heater.
After the modernization of the heater unit, we were able to control the shape of the crystallization front of the growing crystal. In certain periods of crystal growth, it was possible to change the heat dissipation from the rack.
Due to the controlled crystallization front it is possible to obtain practically defect-free crystals. Using our updated software, in which all operations during crystal growth are maximally automated, we achieved stable high results.
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from