The machine is designed for obtaining high-purity fractions of silicon dioxide SiO2 purity up to 99,9995 %.
High-purity quartz is used for the production of materials and products for the micro-electronics industry.
Principle of machine work is based on processing quartz grit by steams of fluorosilicate acid H2SiF6, which coming from the evaporator (reactor with heaters), and on following vapor deposition and crystallization of pure fraction SiO2 on the cold surface.
|Required space (including the service area), m2||4|
|Maximum power consumption, kVA||5|
|Rated mains voltage, V||380|
|Rated frequency, Hz||50(60)|
|Number of phases of power line||2|
|Maximum voltage on the heater, V||20|
|Maximum allowable current on the heater, A||250|
Parameters of obtained quartz
|Purity of the obtained quartz grit, ppm||5|
|Dimensions of the obtained quartz grit, mcm||1-5|
|Plant performance, kg/day||10|
|Parameters of feed raw materials|
|Fraction composition, mcm||100-400|
|The content of impurities, ppm||200|
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from