Machine for enrichment of quartz concentrates
The machine is designed for obtaining high-purity fractions of silicon dioxide SiO2 purity up to 99,9995 %.
High-purity quartz is used for the production of materials and products for the micro-electronics industry.
Principle of machine work is based on processing quartz grit by steams of fluorosilicate acid H2SiF6, which coming from the evaporator (reactor with heaters), and on following vapor deposition and crystallization of pure fraction SiO2 on the cold surface.
| Dimensions | |
| Width, mm | 2260 |
| Depth, mm | 1600 |
| Height, mm | 2400 |
| Required space (including the service area), m2 | 4 |
| Electrical parameters | |
| Maximum power consumption, kVA | 5 |
| Rated mains voltage, V | 380 |
| Rated frequency, Hz | 50(60) |
| Number of phases of power line | 2 |
| Maximum voltage on the heater, V | 20 |
| Maximum allowable current on the heater, A | 250 |
|
Parameters of obtained quartz |
|
| Purity of the obtained quartz grit, ppm | 5 |
| Dimensions of the obtained quartz grit, mcm | 1-5 |
| Plant performance, kg/day | 10 |
| Parameters of feed raw materials | |
| Fraction composition, mcm | 100-400 |
| The content of impurities, ppm | 200 |
Other equipment and control systems NPK Spectr LLC
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Silicon dioxide (quartz)
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
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Polycrystalline silicon carbide powder
High-quality raw materials for the synthesis of silicon carbide single crystals of modifications 4H-SIC and 6H-SIC used in electronic devices.
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Plant for the growth of silicon carbide single crystals 4 or 6 inch diameter
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is