The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by method of floating zone.
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Technical characteristics |
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| Geometric dimensions of grown single crystals:
– length for Мо, Nb, W, Та, not less; – diameter forМо, Nb; – diameter forW, Та |
800 mm from 10 up to 30 mm |
| Heater (cathode unit) | electron-beam heater with filament (cathode) of annular type |
| Power |
80 kW |
| Power supply of the machine |
380/220 V, 50 Hz |
| Medium in the melting chamber of the machine |
Vacuum, 5∙10-6mmHg |
| Accuracy of maintaining the rod speed |
± 0,5 % |
| Axial movements and rotations of the upper and lower rods |
independent |
| Accuracy of maintaining the speed of rotation of the upper and lower rods |
± 0,5 % |
| The deviation from alignment of the upper and lower rods |
± 0,5 mm |
| Overall dimensions:
height: width: length: |
4500 mm 2500 mm 3500 mm |
| Масса |
4000 кг |
High-quality raw materials for the synthesis of silicon carbide single crystals of modifications 4H-SIC and 6H-SIC used in electronic devices.
Is actual for machines for growing crystals with mass more 60 kg The main upgrade is to use a new type of heater.
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is