The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by method of floating zone.
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Technical characteristics |
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| Geometric dimensions of grown single crystals:
– length for Мо, Nb, W, Та, not less; – diameter forМо, Nb; – diameter forW, Та |
800 mm from 10 up to 30 mm |
| Heater (cathode unit) | electron-beam heater with filament (cathode) of annular type |
| Power |
80 kW |
| Power supply of the machine |
380/220 V, 50 Hz |
| Medium in the melting chamber of the machine |
Vacuum, 5∙10-6mmHg |
| Accuracy of maintaining the rod speed |
± 0,5 % |
| Axial movements and rotations of the upper and lower rods |
independent |
| Accuracy of maintaining the speed of rotation of the upper and lower rods |
± 0,5 % |
| The deviation from alignment of the upper and lower rods |
± 0,5 mm |
| Overall dimensions:
height: width: length: |
4500 mm 2500 mm 3500 mm |
| Масса |
4000 кг |
Effective manufacture management begins at the workshop/development level. The specialized automation systems for engineering activities help to optimize workshop production.
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is