Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
Silicon dioxide is used to synthesize high purity polycrystalline silicon carbide.
/ Characteristics of the obtained SiO2 powder :
Impurity content, mass fraction in ppm |
Sample marking |
|
Sample №1 |
Sample №2 |
|
Al |
<0,1 |
0,1 |
B |
0,04 |
0,03 |
Ba |
0,2 |
0,2 |
Ca |
0,1 |
0,1 |
Co |
0,01 |
<0,01 |
Cr |
0,01 |
0,04 |
Cu |
<0,01 |
0,03 |
Fe |
<0,1 |
<0,1 |
K |
<0,1 |
<0,1 |
Li |
0,2 |
0,3 |
Mg |
<0,1 |
<0,1 |
Mn |
<0,01 |
<0,01 |
Na |
<0,1 |
<0,1 |
Ni |
<0,01 |
<0,01 |
Sr |
<0,01 |
<0,01 |
Ti |
<0,1 |
<0,1 |
BRC Spectr offers industrial equipment for the synthesis of high-purity quartz concentrate.
The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by
High-quality raw materials for the synthesis of silicon carbide single crystals of modifications 4H-SIC and 6H-SIC used in electronic devices.
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from