Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.

Silicon dioxide is used to synthesize high purity polycrystalline silicon carbide.
/ Characteristics of the obtained SiO2 powder :
| Impurity content, mass fraction in ppm |
Sample marking |
|
|
Sample №1 |
Sample №2 |
|
| Al |
<0,1 |
0,1 |
| B |
0,04 |
0,03 |
| Ba |
0,2 |
0,2 |
| Ca |
0,1 |
0,1 |
| Co |
0,01 |
<0,01 |
| Cr |
0,01 |
0,04 |
| Cu |
<0,01 |
0,03 |
| Fe |
<0,1 |
<0,1 |
| K |
<0,1 |
<0,1 |
| Li |
0,2 |
0,3 |
| Mg |
<0,1 |
<0,1 |
| Mn |
<0,01 |
<0,01 |
| Na |
<0,1 |
<0,1 |
| Ni |
<0,01 |
<0,01 |
| Sr |
<0,01 |
<0,01 |
| Ti |
<0,1 |
<0,1 |
BRC Spectr offers industrial equipment for the synthesis of high-purity quartz concentrate.
The machine is designed for obtaining high-purity fractions of silicon dioxide SiO2 purity up to 99,9995 %. High-purity quartz is used for the production of materials and products for
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is
Effective manufacture management begins at the workshop/development level. The specialized automation systems for engineering activities help to optimize workshop production.