Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.

Silicon dioxide is used to synthesize high purity polycrystalline silicon carbide.
/ Characteristics of the obtained SiO2 powder :
| Impurity content, mass fraction in ppm |
Sample marking |
|
|
Sample №1 |
Sample №2 |
|
| Al |
<0,1 |
0,1 |
| B |
0,04 |
0,03 |
| Ba |
0,2 |
0,2 |
| Ca |
0,1 |
0,1 |
| Co |
0,01 |
<0,01 |
| Cr |
0,01 |
0,04 |
| Cu |
<0,01 |
0,03 |
| Fe |
<0,1 |
<0,1 |
| K |
<0,1 |
<0,1 |
| Li |
0,2 |
0,3 |
| Mg |
<0,1 |
<0,1 |
| Mn |
<0,01 |
<0,01 |
| Na |
<0,1 |
<0,1 |
| Ni |
<0,01 |
<0,01 |
| Sr |
<0,01 |
<0,01 |
| Ti |
<0,1 |
<0,1 |
BRC Spectr offers industrial equipment for the synthesis of high-purity quartz concentrate.
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is
The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by
Parts made from metal granules using 3D printing or gas-static pressing are used for medicine (implants, medical wires, surgical instruments), for aviation (disks, shafts, shells, complex shapes).