Silicon dioxide (quartz)
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
Silicon dioxide is used to synthesize high purity polycrystalline silicon carbide.
/ Characteristics of the obtained SiO2 powder :
| Impurity content, mass fraction in ppm |
Sample marking |
|
|
Sample №1 |
Sample №2 |
|
| Al |
<0,1 |
0,1 |
| B |
0,04 |
0,03 |
| Ba |
0,2 |
0,2 |
| Ca |
0,1 |
0,1 |
| Co |
0,01 |
<0,01 |
| Cr |
0,01 |
0,04 |
| Cu |
<0,01 |
0,03 |
| Fe |
<0,1 |
<0,1 |
| K |
<0,1 |
<0,1 |
| Li |
0,2 |
0,3 |
| Mg |
<0,1 |
<0,1 |
| Mn |
<0,01 |
<0,01 |
| Na |
<0,1 |
<0,1 |
| Ni |
<0,01 |
<0,01 |
| Sr |
<0,01 |
<0,01 |
| Ti |
<0,1 |
<0,1 |
BRC Spectr offers industrial equipment for the synthesis of high-purity quartz concentrate.
Other equipment and control systems NPK Spectr LLC
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Control systems for technological process of growing sapphire single crystal
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from
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Silicon dioxide (quartz)
Used for the synthesis of high-purity polycrystalline silicon carbide in the electronic and electrical industries.
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Plant for the growth of silicon carbide single crystals 4 or 6 inch diameter
The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is