The plant is designed for growing bulk silicon carbide single crystals by sublimation (LETI method). This plant can grow crystals from 4 to 6 inches. The sublimation method is based on the condensation of supersaturated vapor on a single crystal seed.
The machine is intended refining and obtaining single crystals of refractory metals: molybdenum (Мо), niobium (Nb), tungsten/wolfram (W), tantalum (Та) and their alloysin the form of cylindrical bars by method of floating zone.
During the last decades, three methods are mainly used for growing sapphire single crystals: horizontal directional crystallization (GDC), Kyropoulos and Stepanov. All methods are based on growing crystals from melts.
